Samsung Android Modem Device Driver -mss Ver.3- May 2026
Abstract—This paper presents a comprehensive analysis of the Samsung MSS (Modem SubSystem) version 3 device driver as implemented in Samsung Exynos-based Android devices. MSS v3 represents a significant evolution in mobile communication stack integration, managing 5G NR, LTE, and legacy network interfaces. We examine the driver’s architecture, memory management, power control, IPC mechanisms, and its role within the Android RIL (Radio Interface Layer). Performance benchmarks and security considerations are also discussed.
Possible causes:
Fixes:
Samsung sells devices with both:
| SoC | Modem | MSS Driver Version |
|-----|-------|--------------------|
| Exynos 2100 | Exynos Modem 5123 | MSS Ver.3 (native) |
| Exynos 2200 | Exynos Modem 5300 | MSS Ver.3.2 |
| Snapdragon 888 | X60 | Uses Qualcomm’s msm_ipc – simulated MSS Ver.3 for RIL compatibility |
| Snapdragon 8 Gen 1 | X65 | Wrapper layer: samsung_mss_adapter.c |
Important: On Snapdragon models, “samsung android modem device driver -mss ver.3-” is actually a translation layer. The real modem driver is Qualcomm’s qmi_rmnet and QRTR. Samsung’s MSS Ver.3 sits above it to maintain a common RIL interface across chipsets.
You can identify your device’s true modem driver with: samsung android modem device driver -mss ver.3-
getprop ro.bootloader
getprop gsm.version.baseband
If you see MSS_VER_3 in dmesg on a Snapdragon device, it’s the compatibility shim.
Often attributed to IPC timeouts:
mss_ipc_timeout: pending tx req timed out
mss_force_crash: triggering modem crashdump
Workaround:
One major challenge: the samsung android modem device driver -mss ver.3- is closed-source. AOSP-based ROMs (LineageOS, crDroid, etc.) must use stock kernel binaries or reverse-engineered shims. This leads to:
As Samsung moves to fully integrated 5G modems (Exynos 2200, 2400) and switches to MSS Ver.4/Ver.5, MSS Ver.3 is becoming legacy. However, it remains in active use on:
Understanding MSS Ver.3 is essential for anyone maintaining, repairing, or developing for these devices. Abstract —This paper presents a comprehensive analysis of